bc546 / 547 / 548 document number 85113 rev. 1.2, 02-nov-04 vishay semiconductors www.vishay.com 1 1 88 55_1 1 2 3 2 1 3 e b c small signal transistors (npn) features ? npn silicon epitaxial planar transistors these transistors are subdivided into three groups a, b, and c according to their current gain. the type bc546 is available in groups a and b, how- ever, the types bc547 and bc548 can be supplied in all three groups. as complementary types the pnp transistors bc556...bc558 are recom- mended. on special request, these transistors are also manufactured in the pin configuration to-18. mechanical data case: to-92 plastic case weight: approx. 177 mg packaging codes/options: bulk / 5 k per container 20 k/box tap / 4 k per ammopack 20 k/box parts table part ordering code remarks bc546a bc546a-bulk or bc546a-tap bulk / ammopack bc546b bc546b-bulk or bc546b-tap bulk / ammopack bc547a bc547a-bulk or bc547a-tap bulk / ammopack bc547b bc547b-bulk or bc547b-tap bulk / ammopack bc547c bc547c-bulk or bc547c-tap bulk / ammopack bc548a bc548a-bulk or bc548a-tap bulk / ammopack bc548b bc548b-bulk or bc548b-tap bulk / ammopack bc548c BC548C-BULK or bc548c-tap bulk / ammopack
www.vishay.com 2 document number 85113 rev. 1.2, 02-nov-04 vishay bc546 / 547 / 548 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified 1) valid provided that leads are kept at ambient temperature at distance of 2 mm from case. maximum thermal resistance 1) valid provided that leads are kept at ambient temperature at distance of 2 mm from case. electrical dc characteristics parameter test condition part symbol value unit collector - base voltage bc546 v cbo 80 v bc547 v cbo 50 v bc548 v cbo 30 v collector - emitter voltage bc546 v ces 80 v bc547 v ces 50 v bc548 v ces 30 v bc546 v ceo 65 v bc547 v ceo 45 v bc548 v ceo 30 v emitter - base voltage bc546 v ebo 6v bc547 v ebo 6v bc548 v ebo 5v collector current i c 100 ma collector peak current i cm 200 ma peak base current i bm 200 ma peak emitter current - i em 200 ma power dissipation t amb = 25 c p tot 500 1) mw parameter test condition symbol value unit thermal resistance junction to ambient air r ja 250 1) c/w junction temperature t j 150 c storage temperature range t s - 65 to + 150 c parameter test condition part symbol min ty p max unit small signal current gain (current gain group a) v ce = 5 v, i c = 2 ma, f = 1 khz h fe 220 small signal current gain (current gain group b) v ce = 5 v, i c = 2 ma, f = 1 khz h fe 330 small signal current gain (current gain group c) v ce = 5 v, i c = 2 ma, f = 1 khz h fe 600 input impedance (current gain group a) v ce = 5 v, i c = 2 ma, f = 1 khz h ie 1.6 2.7 4.5 k ? input impedance (current gain group b) v ce = 5 v, i c = 2 ma, f = 1 khz h ie 3.2 4.5 8.5 k ? input impedance (current gain group c) v ce = 5 v, i c = 2 ma, f = 1 khz h ie 68.715k ? output admittance (current gain group a) v ce = 5 v, i c = 2 ma, f = 1 khz h oe 18 30 s output admittance (current gain group b) v ce = 5 v, i c = 2 ma, f = 1 khz h oe 30 60 s output admittance (current gain group c) v ce = 5 v, i c = 2 ma, f = 1 khz h oe 60 110 s
vishay bc546 / 547 / 548 document number 85113 rev. 1.2, 02-nov-04 vishay semiconductors www.vishay.com 3 electrical ac characteristics reverse voltage transfer ratio (current gain group a) v ce = 5 v, i c = 2 ma, f = 1 khz h re 1.5 x 10 -4 reverse voltage transfer ratio (current gain group b) v ce = 5 v, i c = 2 ma, f = 1 khz h re 2 x 10 -4 reverse voltage transfer ratio (current gain group c) v ce = 5 v, i c = 2 ma, f = 1 khz h re 3 x 10 -4 dc current gain (current gain group a) v ce = 5 v, i c = 10 ah fe 90 dc current gain (current gain group b) v ce = 5 v, i c = 10 ah fe 150 dc current gain (current gain group c) v ce = 5 v, i c = 10 ah fe 270 dc current gain (current gain group a) v ce = 5 v, i c = 2 ma h fe 110 180 220 dc current gain (current gain group b) v ce = 5 v, i c = 2 ma h fe 200 290 450 dc current gain (current gain group c) v ce = 5 v, i c = 2 ma h fe 420 500 800 dc current gain (current gain group a) v ce = 5 v, i c = 100 ma h fe 120 dc current gain (current gain group b) v ce = 5 v, i c = 100 ma h fe 200 dc current gain (current gain group c) v ce = 5 v, i c = 100 ma h fe 400 collector saturation voltage i c = 10 ma, i b = 0.5 ma v cesat 80 200 mv i c = 100 ma, i b = 5 ma v cesat 200 600 mv base saturation voltage i c = 10 ma, i b = 0.5 ma v besat 700 mv i c = 100 ma, i b = 5 ma v besat 900 mv base - emitter voltage v ce = 5 v, i c = 2 ma v be 580 660 700 mv v ce = 5 v, i c = 10 ma v be 720 mv collector-emitter cut-off current v ce = 80 v bc546 i ces 0.2 15 na v ce = 50 v bc547 i ces 0.2 15 na v ce = 30 v bc548 i ces 0.2 15 na v ce = 80 v, t j = 125 c bc546 i ces 4 a v ce = 50 v, t j = 125 c bc547 i ces 4 a v ce = 30 v, t j = 125 c bc548 i ces 4 a parameter test condition part symbol min ty p max unit gain - bandwidth product v ce = 5 v, i c = 10 ma, f = 100 mhz f t 300 mhz collector - base capacitance v cb = 10 v, f = 1 mhz c cbo 3.5 6 pf emitter - base capacitance v eb = 0.5 v, f = 1 mhz c ebo 9pf noise figure v ce = 5 v, i c = 200 a, r g = 2 k ? , f = 1 khz, ? f = 200 hz bc546 f 2 10 db bc547 f 2 10 db bc548 f 1.2 4 db parameter test condition part symbol min ty p max unit
www.vishay.com 4 document number 85113 rev. 1.2, 02-nov-04 vishay bc546 / 547 / 548 vishay semiconductors typical characteri stics (tamb = 25 c unless otherwise specified) figure 1. admissible power dissi pation vs. ambient temperature figure 2. dc current gain vs. collector current figure 3. pulse thermal resistance vs. pulse duration 200 18865 t amb - ambient t emperature ( c) 500 400 300 200 100 20 40 60 80 100 120 140 160 180 0 0 p - admissible power dissipation ( mw ) tot -50 c 18824 1 10 100 1000 1 0.1 10 100 0.01 h - dc current gain fe i - collector current ( ma ) c v ce =5v 25 c t amb =100 c t p - pulse length ( s ) 10 -6 10 -4 10 -2 10 2 1 /t =t p p i t t p 0.01 18866 r - pulse thermal resistance ( tha 10 3 10 1 10 -1 10 2 c/w) 0.2 0.1 0.05 0.02 0.05 0.005 =0 figure 4.collector-basecutoffcu rrentvs.ambienttemperature figure 5.collectorcurrentvs.base-emittervoltage figure 6.collector-basecapac itance,emitter-basecapacitance vs.biasvoltage 10 100 1000 10000 1 0.1 200 18826 t amb - ambient temperature ( c) 20 40 60 80 100 120 140 160 180 0 i - collector-base cutoff current ( na ) cbo v: cbo v ces test voltage equal to the given maximum value maximum typical i - collector current ( ma ) c 18827 v be - base-emitter voltag e(v) amb =100 c t -50 c v ce =5v 25 c 1 10 0.1 100 0.2 01 0.4 0.6 0.8 c / c - collector / emitter base capacitance ( pf ) cbo ebo 18828 v cbo ,v ebo - reverse bias voltag e(v) 0 2 4 6 8 10 0.1 10 1 amb =25 c t ebo c cbo c
vishay bc546 / 547 / 548 document number 85113 rev. 1.2, 02-nov-04 vishay semiconductors www.vishay.com 5 figure 7. collector saturation voltage vs. collector current figure 8. relative h-parameters vs. collector current figure 9. gain-bandwidth product vs. collector current v - collector saturation voltag e(v) cesat 0 0.1 0.2 0.3 0.4 0.5 18829 i c - collector current ( ma ) 0.1 1 10 100 amb =100 c t -50 c 25 c i/i=20 cb 18830 1 10 0.1 100 0.1 1 10 h (i )/h (i =2ma) ee cc i c - collector current ( ma ) amb =25 c t v ce =5v h ie h re h fe h oe amb =25 c t 10 100 1000 0.1 1 10 100 v ce =10v 5v 2v f - gain-bandwidth product ( mhz ) t i - collector current ( ma ) c 18831
www.vishay.com 6 document number 85113 rev. 1.2, 02-nov-04 vishay bc546 / 547 / 548 vishay semiconductors packaging for radial taping dimensions in mm 1 12.7 1 0.3 0.2 1 -0.5 18 12 0.3 9 0.5 4 0.2 12.7 0.2 6.3 0.7 5.08 0.7 2.54 + 0.6 - 0.1 measure limit over 20 index - holes: 1 "h" vers. dim. "h" fsz 27 0.5 0.9 max 2 18787
vishay bc546 / 547 / 548 document number 85113 rev. 1.2, 02-nov-04 vishay semiconductors www.vishay.com 7 package dimensions in mm (inches) bottom view 4.6 (0.181) 3.6 (0.142) min. 12.5 (0.492) 4.6 (0.181) max. 0.55 (0.022) 2.5 (0.098) 18776
www.vishay.com 8 document number 85113 rev. 1.2, 02-nov-04 vishay bc546 / 547 / 548 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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